Features
- In-built Temperature Sensor
- Complementary Type to STD03N
- Built-in temperature compensation diodes
- High power (160 W) handling in a small package (TO-3P), for minimized heat sink requirements
- Built-in drivers and temperature compensation diodes, reducing external component count and simplifying circuit design
- Emitter terminals placed symmetrically on NPN and on PNP models, allowing adjacent placement on PCB to minimize trace length and output skew when used in pairs.
Technical Specifications
Breakdown Voltage Vce 160 V
Maximum Collector Current 15 A
Transistor Gain hFE 8,000
Power 160 W
Bandwidth 0 MHz
Junction Capacitance
