EXICON lateral MOSFETs are designed specifically for high fidelity integrated and power amplifiers. Launched in 1993 and improved in 2015, the current range is optimised to offer great advantages to the design of high-end linear amplifiers.
Simplicity in design minimizes the need for additional components in the audio path. The negative temperature coefficient means that Exicon MOSFETs are naturally immune to thermal runaway, and are well matched so there is no need for source resistors. Being voltage driven there is also no need for driver transistors, thus removing at least one amplification stage.
Very High Speed
Very fast response is desirable to preserve the detail in the signal when it gets challenging, such as with an impulse response or percussion.
Extreme linearity gives naturally low distortion even before the application of negative feedback, which reduces it further. Lateral MOSFETs are easy to bias – the natural bias point is where the temperature coefficient is zero. For EXICON MOSFETs this is further into the Class A region to minimise crossover distortion.
Rugged and Robust
EXICON MOSFETs are rugged and robust, and unlike bipolar transistors they are free from secondary breakdown; this means the power rating does not derate with applied voltage. Devices are easily paralleled for very high-power applications.