Technical Specifications
| Breakdown Voltage Vce | -260V |
| Maximum Collector Current | -15A |
| Transistor Gain hFE | 50 |
| Power | 160W |
| Bandwidth | 35MHz |
| Junction Capacitance | 500pf |
Please also refer to the Datasheets & Resources tab.
Features
- LAPT (High frequency multi emitter transistor)
- High power handling capacity, 160 W
- Improved sound output by reduced on-chip impedance
- For professional audio (PA) applications
- Complementary to 2SC6145
Full Description
Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology.
These NPN power transistors achieve faster power-up by decreasing thermal resistance, and provide a higher avalanche breakdown voltage rating.
The high power handling capacity of the MT-100 package allows a smaller footprint on the circuit board layout.
This series of transistors is very well suited not only for multichannel applications for AV (audio-visual) amplifiers and receivers, but also for parallel connection applications for PA (professional audio system) amplifiers.
The 2SA2223A is a suitable equivalent or replacement for the MJW21193 or NJW21193.
Moisture sensitivity level: 1
ISO9001 supplier
RoHS 3 (EU 2015/863)
| Pack sizes & weights (for bulk orders) ? | ||
|---|---|---|
| Tray | 100 | 0.62kg |
| Box | 500 | 3.00kg |
For scheduled orders and further information:
