Pricing
1+ | £0.200 |
10+ | £0.175 |
50+ | £0.150 |
100+ | £0.120 |
500+ | £0.092 |
1k+ | £0.083 |

Technical specifications
Breakdown Voltage Vce | -160V |
Maximum Collector Current | -1.5A |
Transistor Gain hFE | 160 |
Power | 0.6W |
Bandwidth | 140MHz |
Junction Capacitance | 140pf |
Please also refer to the Datasheets & Resources tab.
Features
- Low Noise PNP
- Used in Mic-pre applications
- Complement to 2SD669A
Full description
Bipolar power general purpose transistor.
Low frequency power amplifier complementary pair with UTC 2SB669/ABipolar power general purpose transistor.