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Technical Specifications
Drain Source Voltage | 60V |
Drain Current | 39A |
Power | 38W |
On-state Resistance | 0.01Ω |
Reverse Recovery Time | 35ns |
Total Gate Charge Qg | 17nC |
Please also refer to the Datasheets & Resources tab.
Features
- Low Qg MOSFET series
- Low total gate charge
- Low on-resistance
- High speed switching
- 4.6V gate drive
- TO220 / D2PAK package
Full Description
Silicon N-channel MOSFET
Suitable for high power amplifiers and general switching applications