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Technical specifications
Access Time | 55ns |
Memory Size | 1Mbit |
Organisation | 128K x 8 |
Supply Voltage | 2.3~3.6V |
Access Time | 45/55/70ns |
Please also refer to the Datasheets & Resources tab.
Features
- Fast Access Time from 45ns
- Low Power CMOS typ 2μA Standby Current
- Fully Static Operation - No Clock or Refresh required
- Three State Outputs
- Industrial Temperature Range
- Wide Supply Voltage
Full description
The Netsol Low Power SRAM is fabricated using advanced CMOS process based on a six-transistor cell design. This technology is particularly well suited for use in battery backup applications as the data retention current is very low.
Netsol have a commitment to long term supply which is often an issue for industrial and professional products with a long design cycle.