• Alternate parts in the family(Compare): S6R2016C1A
  • Moisture sensitivity level: 3
  • RoHS 3(EU 2015/863)
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S6R2016C1A-XI10 2Mbit Asynchronous Fast SRAM

Sku:

S6R2016C1A-XI10

The high-speed Static Random Access Memory uses common input and output lines to simplify layout. There is an output enable pin which operates faster than address access time at read cycle so there is no los of speed.

The Memory allows that lower and upper byte access by data byte control(UB, LB).

The device is fabricated using advanced CMOS process, 6-TR based cell technology for reliable and cost effective performance, ideally suited for high-speed circuit technology.

The Memory is packaged in industry standard packages.

Technical Specification
Access Time 10ns
Memory Size 2Mbit
Organisation 128K x 16
Supply Voltage 5V
Access Time (Family) 10ns

UK Customers

Orders below £100.00 can be delivered by 1st Class Post at a rate of £3.50 (allow 3-5 working days) or a next working day tracked courier at a rate of £9.00.

Orders above £100.00 are delivered by a next working day tracked courier at a rate of £9.00.

 

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