S6R4008C1A-UI10 4Mbit Asynchronous Fast SRAMFeatures | Pricing | Description | Datasheet
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|Organisation||512K x 8|
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- Fast Access Time - from 8ns
- CMOS Low Power Dissipation
- TTL Compatible Inputs and Outputs
- Fully Static Operation, No Clock or Refresh required
- Three State Outputs
- Industrial Temperature Range
- Long Term Supply Commitment
The high-speed Static Random Access Memory uses common input and output lines to simplify layout. There is an output enable pin which operates faster than address access time at read cycle so there is no los of speed.
The Memory allows that lower and upper byte access by data byte control(UB, LB).
The device is fabricated using advanced CMOS process, 6-TR based cell technology for reliable and cost effective performance, ideally suited for high-speed circuit technology.
The Memory is packaged in industry standard packages.