S7B323635M-EC65 36Mbit Synchronous Flow Through SRAMFeatures | Pricing | Description | Datasheet
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|Organisation||1M x 36|
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- VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply
- Synchronous Operation
- Self-Timed Write Cycle
- On-Chip Address Counter and Control Registers
- Byte Writable Function
The S7B323635M is a 37,748,736-bit Synchronous Static Random Access Memory designed for high performance.