THAT300AS14-U Low Noise Transistor ArrayFeatures | Pricing | Description | Datasheet
Alternate parts in this family (Compare):
Please select a currency.
Your currency is defined when you set up your account. Please contact us if you would like to pay using a different currency than selected.
|Breakdown Voltage Vce||40V|
|Maximum Collector Current||0.05A|
|Transistor Gain hFE||100|
|Voltage Noise en||0.8nV|
|Gain Bandwidth product||350MHz|
|Current Gain Matching||4%|
Please also refer to the Datasheets & Resources tab.
- 4 matched NPN Transistors
- Low Noise 0.8nV/Rt Hz
- High Speed (350MHz)
- Excellent Matching (500uV typ)
These high-performance arrays, manufactured in THAT's proprietary dielectric isolation (DI) process, exhibit low noise (0.8 nV/RtHz), high-speed (350 MHz), and excellent VBE matching (500uV typical).
With their DI construction, the devices exhibit extremely low crosstalk and complete DC isolation.
This device is ESD Sensitive on all pins