THAT340S14-UR Low Noise Transistor ArrayFeatures | Pricing | Description | Datasheet
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|Breakdown Voltage Vce||36V|
|Maximum Collector Current||0.03A|
|Transistor Gain hFE||75|
|Voltage Noise en||0.8nV|
|Gain Bandwidth product||325MHz|
|Current Gain Matching||5%|
- 2 matched PNP Transistors
- 2 matched NPN Transistors
- Low Noise 0.8nV/√Hz (NPN) 0.75nV/√Hz (PNP)
- High Speed 350MHz (NPN) 325MHz (PNP)
- Excellent Matching (500μV typ)
These high-performance arrays, manufactured in THAT's proprietary dielectric isolation (DI) process, exhibit low noise (0.8 nV/Hz½), high-speed (325-250 MHz), and excellent VBE matching (500uV typical).
With their DI construction, the devices exhibit extremely low crosstalk and complete DC isolation.
This device is ESD Sensitive on all pins