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  • Moisture sensitivity level: 1
  • RoHS 3(EU 2015/863)
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UT3419G-AE3-R P Channel Enchancement Mode Power Mosfet

Sku:

UT3419G-AE3-R

The UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V.

The part can be applied in PWM applications or used as a load switch.

Technical Specification
Drain Source Voltage -20V
Drain Current -μ0.5A
Power 1.4W
On-state Resistance 0.059Ω
Reverse Recovery Time 9.8ns
Total Gate Charge (Qg) 5.5nC

UK Customers

Orders below £100.00 can be delivered by 1st Class Post at a rate of £3.50 (allow 3-5 working days) or a next working day tracked courier at a rate of £9.00.

Orders above £100.00 are delivered by a next working day tracked courier at a rate of £9.00.

 

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