UT3419G-AE3-R P Channel Enchancement Mode Power MosfetFeatures | Pricing | Description | Datasheet
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|Drain Source Voltage||-20V|
|Reverse Recovery Time||9.8ns|
|Total Gate Charge Qg||5.5nC|
- RDS(ON) ≤ 75mΩ @ VGS=-10V, ID=-3.5A
- RDS(ON) ≤ 95mΩ @ VGS=-4.5V, ID=-3.0A
- RDS(ON) ≤ 145mΩ @ VGS=-2.8V, ID=-1.0A
The UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V.
The part can be applied in PWM applications or used as a load switch.