Active
Pricing
This product is active but not available via the site.
To purchase this product or request a sample, please contact us.
Technical specifications
Drain Source Voltage | -20V |
Drain Current | -2.4A |
Power | 1.25W |
On-state Resistance | 0.21Ω |
Reverse Recovery Time | 12.8ns |
Total Gate Charge Qg | 7.5nC |
Please also refer to the Datasheets & Resources tab.
Features
- Fast switching speed
- Low on resistance
- Low gate voltage operation
Full description
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.