• Alternate parts in the family(Compare): UT4101G
  • Moisture sensitivity level: 1
  • RoHS 3(EU 2015/863)
Active

UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET

Sku:

UT4101G-AE3-R

The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Technical Specification
Drain Source Voltage -20V
Drain Current -2.4A
Power 1.25W
On-state Resistance 0.21Ω
Reverse Recovery Time 12.8ns
Total Gate Charge (Qg) 7.5nC

UK Customers

Orders below £100.00 can be delivered by 1st Class Post at a rate of £3.50 (allow 3-5 working days) or a next working day tracked courier at a rate of £9.00.

Orders above £100.00 are delivered by a next working day tracked courier at a rate of £9.00.

 

All prices shown exclude VAT.

 

View all delivery rates