UT4101G-AE3-R P-Channel Enhancement mode Power MOSFETFeatures | Pricing | Description | Datasheet
This product is active but not available via the site.
To purchase this product or request a sample, please contact us.
|Drain Source Voltage||-20V|
|Reverse Recovery Time||12.8ns|
|Total Gate Charge Qg||7.5nC|
Please also refer to the Datasheets & Resources tab.
- Fast switching speed
- Low on resistance
- Low gate voltage operation
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.